Pages that link to "Item:Q1614112"
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The following pages link to Numerical discretization of energy-transport model for semiconductors using high-order compact schemes (Q1614112):
Displaying 9 items.
- Simulation of an \(n^+\)-\(n\)-\(n^+\) diode by using globally-hyperbolically-closed high-order moment models (Q461266) (← links)
- 2D numerical simulation of the MEP energy-transport model with a finite difference scheme (Q870557) (← links)
- Analysis of numerical schemes for semiconductor energy-transport models (Q2041052) (← links)
- Numerical analysis of DDFV schemes for semiconductors energy-transport models (Q2064992) (← links)
- Energy transport in semiconductor devices (Q2929098) (← links)
- Discrete duality finite volume schemes for two‐dimensional drift‐diffusion and energy‐transport models (Q3596552) (← links)
- Numerical Discretization of Energy-Transport Models for Semiconductors with Nonparabolic Band Structure (Q4509867) (← links)
- Numerical Schemes for Semiconductors Energy-Transport Models (Q5117426) (← links)
- High-field approximations of the energy-transport model for semiconductors with non-parabolic band structure (Q5956224) (← links)
