Pages that link to "Item:Q1762241"
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The following pages link to Physical principles of operation of oxidizing gas sensors based on metal oxide semiconductors (Q1762241):
Displaying 5 items.
- Modeling of radiation sensitivity of hydrogen sensors based on MISFET (Q329231) (← links)
- Integrated hydrogen sensors based on MIS transistor sensitive elements: modeling of characteristics (Q499579) (← links)
- Influence of oxygen adsorption on the surface potential of a metal oxide semiconductor (Q1762272) (← links)
- Methods and tools for evaluating the characteristics of MIS-capacitor gas sensors (Q2689586) (← links)
- Some new problems occurring in modeling of oxygen sensors. (Q2717405) (← links)