Pages that link to "Item:Q1932782"
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The following pages link to Mathematical modeling of Czochralski type growth processes for semiconductor bulk single crystals (Q1932782):
Displaying 7 items.
- Higher \(L^p\) regularity for vector fields that satisfy divergence and rotation constraints in dual Sobolev spaces, and application to some low-frequency Maxwell equations (Q479107) (← links)
- \(\mathrm{BaF}_2\) for microlithography applications: modeling, simulation and optimization of the crystal growth process (Q880185) (← links)
- Finite element simulation of single crystal growth process using GSMAC method (Q1860499) (← links)
- Modeling and simulation of sublimation growth of SiC bulk single crystals (Q1884568) (← links)
- Optimal control of semiconductor melts by traveling magnetic fields (Q2296243) (← links)
- The Effect of an Axial Magnetic Field at the Interface of a Crystal Grown by the Czochralski Method (Q3716686) (← links)
- Analysis of a mathematical model related to Czochralski crystal growth (Q5926233) (← links)
