Pages that link to "Item:Q2384186"
From MaRDI portal
The following pages link to Numerical simulation of tunneling effects in nanoscale semiconductor devices using quantum corrected drift-diffusion models (Q2384186):
Displaying 8 items.
- Modeling and simulation of electronic structure, material interface and random doping in nano-electronic devices (Q975119) (← links)
- Quantum-corrected drift-diffusion models: Solution fixed point map and finite element approximation (Q1005417) (← links)
- Quantum-corrected drift-diffusion models for transport in semiconductor devices (Q1775795) (← links)
- A coupled Schrödinger drift-diffusion model for quantum semiconductor device simulations (Q1851269) (← links)
- Numerical algorithms based on Galerkin methods for the modeling of reactive interfaces in photoelectrochemical (PEC) solar cells (Q2412210) (← links)
- Numerical simulation of the distribution of charge carrier in nanosized semiconductor heterostructures with account for polarization effects (Q2629981) (← links)
- Quantum Semiconductor Models (Q2904898) (← links)
- (Q3154773) (← links)
