Pages that link to "Item:Q2390425"
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The following pages link to Efficient solution of the Schrödinger-Poisson equations in layered semiconductor devices (Q2390425):
Displaying 13 items.
- Isospectral measures (Q380197) (← links)
- Solution of the 1D Schrödinger equation in semiconductor heterostructures using the immersed interface method (Q385919) (← links)
- A discrete geometric approach to solving time independent Schrödinger equation (Q630374) (← links)
- A numerical iterative method for solving Schrödinger and Poisson equations in nanoscale single, double and surrounding gate metal-oxide-semiconductor structures (Q709767) (← links)
- Modeling and simulation of electronic structure, material interface and random doping in nano-electronic devices (Q975119) (← links)
- The Asymptotic form of the solution of the Poisson equation in a model of a three-dimensional semiconductor structure (Q1802638) (← links)
- A Rayleigh-Chebyshev procedure for finding the smallest eigenvalues and associated eigenvectors of large sparse Hermitian matrices (Q2638264) (← links)
- Complementary geometric formulations for electrostatics (Q2880279) (← links)
- Efficient Numerical Solution of the 3-D Semiconductor Poisson Equation for {Monte Carlo} Device Simulation (Q2969340) (← links)
- Exact resolution of coupled Schrödinger–Poisson equation: application to accurate determination of potential profile in HEMTs (Q3359698) (← links)
- (Q3830490) (← links)
- Simulation of Si n-MOS inversion layer with Schrödinger-Poisson equivalent circuit model (Q5471035) (← links)
- An improved shooting approach for solving the time-independent Schrödinger equation for III/V QW structures (Q5938082) (← links)
