Pages that link to "Item:Q2882840"
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The following pages link to The choice of the pressure of the gas flow and the melt level in silicon tube growth (Q2882840):
Displaying 4 items.
- Dynamics and control of the shape and size of a sitting drop-like meniscus, occurring in single-crystal growth (Q468209) (← links)
- Inequalities for single crystal tube growth by edge-defined film-fed growth technique (Q1035537) (← links)
- On the creation of a stable drop-like static meniscus, appropriate for the growth of a single crystal tube with prior specified inner and outer radii (Q1036331) (← links)
- Inequalities for single crystal rod growth by edge-defined film-fed growth (E.F.G.) technique (Q1039466) (← links)