Pages that link to "Item:Q310099"

The following pages link to Ab initio calculation of the deformation potential and photoelastic coefficients of silicon with a non-uniform finite-difference solver based on the local density approximation (Q310099):

Displaying 8 items.

• Re-examining the electronic structure of germanium: a first-principle study (Q465525) (← links)
• Plane-wave implementation of the real-space \(K \cdot p\) formalism and continuum elasticity theory (Q615139) (← links)
• Estimation of the deformation-potential constant for \(p\)-type isotropic polycrystalline silicon through the deformation potential of a \(p\)-type silicon single crystal (Q664960) (← links)
• The effect of uniaxial stress on band structure and electron mobility of silicon (Q1010026) (← links)
• Ab initio calculations of thermal radiative properties: the semiconductor GaAs (Q2379469) (← links)
• Elastic properties of group IV semiconductors by pseudopotential approach (Q2919282) (← links)
• Influence of k-point sampling on stability of structures obtained by ab initio MD simulations (Q5956353) (← links)
• First-principles LCPAO approach for insulators under finite electric fields with forces (Q6043082) (← links)