Pages that link to "Item:Q3369401"
From MaRDI portal
The following pages link to Discretization of semiconductor device problems. II (Q3369401):
Displaying 10 items.
- Adaptive mesh refinement for compressible thermal flow in porous media (Q349694) (← links)
- Analysis of a two-grid method for semiconductor device problem (Q824069) (← links)
- 2D numerical simulation of the MEP energy-transport model with a finite difference scheme (Q870557) (← links)
- Convergent discretizations for the Nernst-Planck-Poisson system (Q1006843) (← links)
- On the inclusion of the recombination term in discretizations of the semiconductor device equations (Q1079938) (← links)
- A free energy satisfying discontinuous Galerkin method for one-dimensional Poisson-Nernst-Planck systems (Q1712710) (← links)
- AN EXTENDED SCHARFETTER‐GUMMEL SCHEME FOR HIGH ORDER MOMENT EQUATIONS (Q3990357) (← links)
- TRANSIENT SEMICONDUCTOR DEVICE SIMULATION INCLUDING ENERGY BALANCE EQUATION (Q4021602) (← links)
- EM-Equations, Coupling to Heat and to Circuits (Q5115065) (← links)
- An Adaptive Conservative Finite Volume Method for Poisson-Nernst-Planck Equations on a Moving Mesh (Q5161656) (← links)