Pages that link to "Item:Q3482800"
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The following pages link to SEMICONDUCTOR DEVICE MODELING USING FLUX UPWIND FINITE ELEMENTS (Q3482800):
Displaying 10 items.
- Stabilized 3D finite elements for the numerical solution of the Navier-Stokes equations in semiconductors (Q1033190) (← links)
- Numerical solution of two-carrier hydrodynamic semiconductor device equations employing a stabilized finite element method (Q1578659) (← links)
- Hydrodynamic modeling of short-channel devices using an upwind flux vector splitting scheme. (Q1871018) (← links)
- Enriched residual free bubbles for semiconductor device simulation (Q1937034) (← links)
- A class of finite element methods with averaging techniques for solving the three-dimensional drift-diffusion model in semiconductor device simulations (Q2139005) (← links)
- A block-centered upwind approximation of the semiconductor device problem on a dynamically changing mesh (Q2155109) (← links)
- Upwind finite volume element methods for one-dimensional semiconductor device (Q2392657) (← links)
- A perspective on adaptive modeling and meshing (AM\& M) (Q2575903) (← links)
- Simulation of MESFET device by streamline‐diffusion finite element methods (Q4331566) (← links)
- Multilevel solution of augmented drift‐diffusion equations (Q4895820) (← links)