Pages that link to "Item:Q3488579"
From MaRDI portal
The following pages link to Asymptotic Methods for Metal Oxide Semiconductor Field Effect Transistor Modeling (Q3488579):
Displaying 9 items.
- Boundary layer analysis in the semiclassical limit of a quantum drift-diffusion model (Q423607) (← links)
- A compact quantum surface potential model for a MOSFET device (Q988450) (← links)
- A compact model for the \(I\)-\(V\) characteristics of an undoped double-gate MOSFET (Q1010036) (← links)
- A direct approach to solving the drift-diffusion model equations for use in certain MOSFET devices (Q1903393) (← links)
- Approximate solutions to the quantum drift-diffusion model of semiconductors (Q3442212) (← links)
- (Q4544048) (← links)
- Current/Voltage Characteristics of the Short-Channel Double-Gate Transistor. Part I (Q4609599) (← links)
- Two-Dimensional Modeling of Electron Flow Through a Poorly Conducting Layer (Q5253626) (← links)
- (Q5286428) (← links)