Pages that link to "Item:Q3541262"
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The following pages link to Modifications of the DC Raytheon-Statz model for SiC MESFETs (Q3541262):
Displaying 4 items.
- Modelling DC characteristics of GaAs MESFETs in a wide range of temperatures (Q2708353) (← links)
- Investigations of SiC merged pin Schottky diodes under isothermal and non-isothermal conditions (Q3015393) (← links)
- Comparing the MESFET and HEMT models for efficient circuit design (Q3442827) (← links)
- SPICE modelling of power Schottky diodes (Q3541259) (← links)