Pages that link to "Item:Q3829017"
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The following pages link to A COMPARISON OF VARIOUS DISCRETIZATION SCHEMES FOR THE STATIONARY SEMICONDUCTOR DEVICE CONTINUITY EQUATION (Q3829017):
Displaying 8 items.
- Local discontinuous Galerkin methods for moment models in device simulations: Performance assessment and two-dimensional results (Q881483) (← links)
- On the inclusion of the recombination term in discretizations of the semiconductor device equations (Q1079938) (← links)
- Continuation methods in semiconductor device simulation (Q1119373) (← links)
- Computational and analytical comparison of flux discretizations for the semiconductor device equations beyond Boltzmann statistics (Q1691899) (← links)
- Convergence of a second-order accurate Petrov-Galerkin scheme for convection-diffusion problems in semiconductors (Q1801364) (← links)
- Numerical solution of drift diffusion equations using 2D finite difference method: application to a strained MOSFET device (Q2864895) (← links)
- An analysis of the Scharfetter-Gummel box method for the stationary semiconductor device equations (Q4698886) (← links)
- A NECESSARY CONDITION ON DISCRETIZATION SCHEMES FOR DEVICE SIMULATION (Q4835950) (← links)
