Pages that link to "Item:Q3982534"
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The following pages link to The approximation of the electric potential by a mixed method in the simulation of semiconductor (Q3982534):
Displaying 9 items.
- Analysis on block-centered finite differences of numerical simulation of semiconductor device detector (Q671087) (← links)
- A mixed-finite volume element coupled with the method of characteristic fractional step difference for simulating transient behavior of semiconductor device of heat conductor and its numerical analysis (Q1690583) (← links)
- A block-centered upwind approximation of the semiconductor device problem on a dynamically changing mesh (Q2155109) (← links)
- ACCURATE COMPUTATION OF ELECTRIC FIELD IN REVERSE‐BIASED SEMICONDUCTOR DEVICES: A MIXED FINITE‐ELEMENT APPROACH (Q3756468) (← links)
- Finite Element Approximation to Initial-Boundary Value Problems of the Semiconductor Device Equations with Magnetic Influence (Q4012382) (← links)
- A mixed problem for electrostatic potential in semiconductors (Q4314854) (← links)
- An upwind-block-centered finite difference method for a semiconductor device of heat conduction and its numerical analysis (Q6157896) (← links)
- Mathematical Model, Numerical Simulation and Convergence Analysis of a Semiconductor Device Problem with Heat and Magnetic Influences (Q6489808) (← links)
- Upwind block-centered multistep differences for semiconductor device problem with heat and magnetic influences (Q6647582) (← links)
