The following pages link to (Q4271565):
Displaying 8 items.
- MATHEMATICAL AND NUMERICAL ANALYSIS OF THE SPREADING RESISTANCE OF SEMICONDUCTOR BURIED RIDGE STRIPE LASERS (Q3031873) (← links)
- Self-adaptive finite-element simulation of bipolar, strongly reverse-biased pn-junctions (Q3136815) (← links)
- ON REGIONAL OPTIMISATION OF GRID AND RELAXATION PARAMETER FOR FINITE DIFFERENCE SOLUTION OF POISSONS' EQUATION IN REVERSE BIASED PLANAR TYPE p‐n JUNCTIONS (Q3482778) (← links)
- A COMPARISON OF SOME METHODS FOR THE SOLUTION OF THE NONLINEAR POISSON EQUATION IN SEMICONDUCTOR DEVICE MODELLING (Q3777396) (← links)
- (Q3830490) (← links)
- A mixed problem for electrostatic potential in semiconductors (Q4314854) (← links)
- (Q4354570) (← links)
- MIXED FINITE ELEMENT SIMULATION OF HETEROJUNCTION STRUCTURES INCLUDING A BOUNDARY LAYER MODEL FOR THE QUASI‐FERMI LEVELS (Q4835971) (← links)