Pages that link to "Item:Q4342160"

The following pages link to Mixed finite volume methods for semiconductor device simulation (Q4342160):

Displaying 29 items.

• On the existence of solutions for a drift-diffusion system arising in corrosion modeling (Q480029) (← links)
• Uniform-in-time bounds for approximate solutions of the drift-diffusion system (Q670303) (← links)
• A parallel monotone iterative method for the numerical solution of multi-dimensional semiconductor Poisson equation (Q709393) (← links)
• Numerical solutions of Euler-Poisson systems for potential flows (Q999078) (← links)
• Stabilized 3D finite elements for the numerical solution of the Navier-Stokes equations in semiconductors (Q1033190) (← links)
• A toolkit for numerical simulation of PDEs. I: Fundamentals of generic finite volume simulation. (Q1400251) (← links)
• An iterative method for adaptive finite element solutions of an energy transport model of semiconductor devices (Q1405166) (← links)
• Quantum-corrected drift-diffusion models for transport in semiconductor devices (Q1775795) (← links)
• Finite element approximation of quasi-3D shallow water equations (Q1971312) (← links)
• A discretization scheme for an extended drift-diffusion model including trap-assisted phenomena. (Q1976830) (← links)
• Discretization of Poisson's equation in two domains with non algebraic interface conditions for plasma simulations (Q2242823) (← links)
• Numerical simulation of tunneling effects in nanoscale semiconductor devices using quantum corrected drift-diffusion models (Q2384186) (← links)
• Stability and error analysis of mixed finite-volume methods for advection dominated problems (Q2475860) (← links)
• Exponentially fitted mixed finite volumes for energy balance models in semiconductor device simulation (Q2704822) (← links)
• Dual-primal mixed finite elements for elliptic problems (Q2712971) (← links)
• Mesh adaptation strategies for shallow water flow (Q3835945) (← links)
• Electrode separation method to the boundary condition for a-Si TFT mixed-level simulation (Q4213648) (← links)
• (Q4309755) (← links)
• Simulation of MESFET device by streamline‐diffusion finite element methods (Q4331566) (← links)
• Mixed finite volume methods on nonstaggered quadrilateral grids for elliptic problems (Q4794629) (← links)
• MIXED FINITE ELEMENT APPROACH AND NONLINEAR IMPLICIT SCHEMES FOR DRIFT‐DIFFUSION EQUATION SOLUTION OF 2D HETEROJUNCTION SEMICONDUCTOR DEVICES (Q4835953) (← links)
• FINITE VOLUME APPROXIMATION FOR DEGENERATE DRIFT-DIFFUSION SYSTEM IN SEVERAL SPACE DIMENSIONS (Q5315589) (← links)
• Mixed initial-boundary value problem in particle modeling of microelectronic devices (Q5432649) (← links)
• (Q5436075) (← links)
• New mixed finite volume methods for second order eliptic problems (Q5477289) (← links)
• (Q5865529) (← links)
• Stabilized mixed finite elements for fluid models in semiconductors (Q5933345) (← links)
• Stabilized finite elements for semiconductor device simulation (Q5933369) (← links)
• A new parallel adaptive finite volume method for the numerical simulation of semiconductor devices (Q5956354) (← links)