Pages that link to "Item:Q4537264"
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The following pages link to Simulation of submicron pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistors (Q4537264):
Displaying 5 items.
- Impact of strain relaxation of alGaN barrier layer on the performance of high Al-content AlGaN/GaN HEMT (Q851263) (← links)
- A self-consistent numerical method for simulation of quantum transport in high electron mobility transistor. I: The Boltzmann-Poisson-Schrödinger solver (Q1286257) (← links)
- Nonequilibrium and ballistic transport, and backscattering in decanano HEMTs: A Monte Carlo simulation study. (Q1873036) (← links)
- Modelling DC characteristics of GaAs MESFETs in a wide range of temperatures (Q2708353) (← links)
- Comparing the MESFET and HEMT models for efficient circuit design (Q3442827) (← links)