Pages that link to "Item:Q4655091"
From MaRDI portal
The following pages link to Monte Carlo Simulation of Narrow-Width SOI Devices: Incorporation of the Short Range Coulomb Interaction (Q4655091):
Displaying 5 items.
- Reduction of the self-forces in Monte Carlo simulations of semiconductor devices on unstructured meshes (Q614988) (← links)
- Electric power in nanoscale devices with full Coulomb interaction (Q3585590) (← links)
- COMPUTER SIMULATION OF <font>ZnO</font> FIELD-EFFECT TRANSISTOR FOR HIGH-POWER AND HIGH-TEMPERATURE APPLICATIONS USING THE MONTE CARLO METHOD (Q3635926) (← links)
- Monte Carlo evaluation of the transport coefficients in a n<sup>+</sup> – n – n<sup>+</sup> silicon diode (Q4519080) (← links)
- Large-Scale Scientific Computing (Q5426114) (← links)