Pages that link to "Item:Q5185385"
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The following pages link to A Singularly Perturbed Boundary Value Problem Modelling a Semiconductor Device (Q5185385):
Displaying 22 items.
- Quasi-neutral limit to the drift-diffusion models for semiconductors with physical contact-insulating boundary conditions (Q615977) (← links)
- Local-in-time well-posedness of a regularized mathematical model for silicon MESFET (Q638709) (← links)
- Quasi-neutral limit to the drift-diffusion models for semiconductors with physical contact-insulating boundary conditions and the general sign-changing doping profile (Q960886) (← links)
- A note on current-voltage characteristics from the quantum hydrodynamic equations for semiconductors (Q1372297) (← links)
- A survey of numerical techniques for solving singularly perturbed ordinary differential equations (Q1855755) (← links)
- Mixed layer problem and quasineutral limit of the bipolar drift-diffusion model with different mobilities (Q2165001) (← links)
- The \(p-n\) junction under nonuniform strains: general theory and application to photovoltaics (Q2201294) (← links)
- Quasineutral limit of a time-dependent drift-diffusion-Poisson model for p-n junction semiconductor devices (Q2496733) (← links)
- Quasi-neutral limit of the drift-diffusion model for semiconductors with general sign-changing doping profile (Q2519323) (← links)
- The initial-boundary value problem of semiconductor equations with discontinuous permittivities (Q2746515) (← links)
- QUASI-NEUTRAL LIMIT OF THE MULTIDIMENSIONAL DRIFT-DIFFUSION MODELS FOR SEMICONDUCTORS (Q3056449) (← links)
- ASYMPTOTIC METHODS FOR TRANSIENT SEMICONDUCTOR DEVICE EQUATIONS (Q3483645) (← links)
- Singular perturbation analysis of the steady-state Poisson–Nernst–Planck system: Applications to ion channels (Q3529504) (← links)
- A Singular Perturbation Analysis of the Fundamental Semiconductor Device Equations (Q3684483) (← links)
- A Singular Perturbation Analysis for the Transient Semiconductor Device Equations in One Space Dimension (Q3807607) (← links)
- Finite Element Approximation to Initial-Boundary Value Problems of the Semiconductor Device Equations with Magnetic Influence (Q4012382) (← links)
- THE GLOBAL WEAK SOLUTION AND RELAXATION LIMITS OF THE INITIAL–BOUNDARY VALUE PROBLEM TO THE BIPOLAR HYDRODYNAMIC MODEL FOR SEMICONDUCTORS (Q4526093) (← links)
- Singular perturbation theory applied to the electrochemistry equations in the case of electroneutrality (Q4735457) (← links)
- THE GLOBAL WEAK SOLUTION AND RELAXATION LIMITS OF THE INITIAL–BOUNDARY VALUE PROBLEM TO THE BIPOLAR HYDRODYNAMIC MODEL FOR SEMICONDUCTORS (Q4798842) (← links)
- QUASINEUTRAL LIMIT OF THE MULTI-DIMENSIONAL DRIFT-DIFFUSION-POISSON MODELS FOR SEMICONDUCTORS WITH PN-JUNCTIONS (Q5484742) (← links)
- Numerical Approximation of a Drift‐Diffusion Model for Semiconductors with Nonlinear Diffusion (Q5691223) (← links)
- On the initial-boundary value problem for the bipolar hydrodynamic model for semiconductors (Q5937326) (← links)
