Pages that link to "Item:Q5433590"
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The following pages link to A new approach for numerical simulation of quantum transport in double‐gate SOI (Q5433590):
Displaying 13 items.
- Impact of geometric, thermal and tunneling effects on nano-transistors (Q349785) (← links)
- Quantum hydrodynamic simulation of discrete-dopant fluctuated physical quantities in nanoscale FinFET (Q546895) (← links)
- Effect of boundary treatments on quantum transport current in the Green's function and Wigner distribution methods for a nano-scale DG-MOSFET (Q975120) (← links)
- Three-dimensional quantum simulation of multigate nanowire field effect transistors (Q1010025) (← links)
- A self-consistent numerical method for simulation of quantum transport in high electron mobility transistor. II: The full quantum transport (Q1286258) (← links)
- Computational issues in the simulation of semiconductor quantum wires (Q1970144) (← links)
- 3D quantum transport solver based on the perfectly matched layer and spectral element methods for the simulation of semiconductor nanodevices (Q2462465) (← links)
- Simulation of quantum transport in double-gate MOSFETs using the non-equilibrium Green's function formalism in real-space: A comparison of four methods (Q3015382) (← links)
- Quantum transport, quantum effects and circuit functionality of nanostructured electronic circuits (Q3159455) (← links)
- Numerical simulation of tunneling through arbitrary potential barriers applied on MIM and MIIM rectenna diodes (Q4683468) (← links)
- (Q4720749) (← links)
- Large-Scale Scientific Computing (Q5426114) (← links)
- Simulation of Si n-MOS inversion layer with Schrödinger-Poisson equivalent circuit model (Q5471035) (← links)
