Pages that link to "Item:Q5470400"
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The following pages link to Deterministic Simulation of the Boltzmann--Poisson System in GaAs-Based Semiconductors (Q5470400):
Displaying 11 items.
- Deterministic particle simulations of the Boltzmann transport equation of semiconductors (Q1114372) (← links)
- DSMC method consistent with the Pauli exclusion principle and comparison with deterministic solutions for charge transport in graphene (Q2374804) (← links)
- A parallel deterministic solver for the Schrödinger-Poisson-Boltzmann system in ultra-short DG-MOSFETs: Comparison with Monte-Carlo (Q2397192) (← links)
- A deterministic solver for the transport of the AlGaN/GaN 2D electron gas including hot-phonon and degeneracy effects (Q2568067) (← links)
- A Deterministic Multicell Solution to the Coupled Boltzmann-Poisson System Simulating the Transients of a 2D-Silicon MESFET (Q3618269) (← links)
- The Consistency and the Monte Carlo Method for Semiconductor Boltzmann Equations with Multivalley (Q5064418) (← links)
- Adaptive energy discretization of the semiconductor Boltzmann equation (Q5758142) (← links)
- Numerical scheme for the far-out-of-equilibrium time-dependent Boltzmann collision operator: 1D second-degree momentum discretisation and adaptive time stepping (Q6104167) (← links)
- Numerical solver for the time-dependent far-from-equilibrium Boltzmann equation (Q6104192) (← links)
- Numerical solver for the out-of-equilibrium time dependent Boltzmann collision operator: application to 2D materials (Q6156977) (← links)
- Convergence of a Direct Simulation Monte Carlo Method for the Space Inhomogeneous Semiconductor Boltzmann Equations with Multi-valley (Q6178107) (← links)