Pages that link to "Item:Q5471035"
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The following pages link to Simulation of Si n-MOS inversion layer with Schrödinger-Poisson equivalent circuit model (Q5471035):
Displaying 3 items.
- A numerical iterative method for solving Schrödinger and Poisson equations in nanoscale single, double and surrounding gate metal-oxide-semiconductor structures (Q709767) (← links)
- A new approach for numerical simulation of quantum transport in double‐gate SOI (Q5433590) (← links)
- An equivalent-circuit modelling on vertical and horizontal integrations for MOS flat-band voltage simulation (Q5471041) (← links)