Pages that link to "Item:Q5707802"
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The following pages link to A combined multicell‐WENO solver for the Boltzmann‐Poisson system of 1D semiconductor devices (Q5707802):
Displaying 11 items.
- A WENO-solver combined with adaptive momentum discretization for the Wigner transport equation and its application to resonant tunneling diodes (Q728979) (← links)
- A fast implicit solver for semiconductor models in one space dimension (Q782015) (← links)
- A nonlinear multigrid method for one-dimensional semiconductor device simulation: Results for the diode (Q911239) (← links)
- Upwind finite difference solution of Boltzmann equation applied to electron transport in semiconductor devices (Q1316044) (← links)
- A WENO-solver for the transients of Boltzmann-Poisson system for semiconductor devices: Performance and comparisons with Monte Carlo methods. (Q1873343) (← links)
- 2D semiconductor device simulations by WENO-Boltzmann schemes: efficiency, boundary conditions and comparison to Monte Carlo methods (Q2490272) (← links)
- A direct multigroup-WENO solver for the 2D non-stationary Boltzmann--Poisson system for GaAs devices: GaAs-MESFET (Q2581696) (← links)
- Charge transport in 1D silicon devices via Monte Carlo simulation and Boltzmann‐Poisson solver (Q3156132) (← links)
- Numerical schemes for solving the non-stationary Boltzmann-Poisson system for two-dimensional semiconductor devices (Q3375312) (← links)
- A Deterministic Multicell Solution to the Coupled Boltzmann-Poisson System Simulating the Transients of a 2D-Silicon MESFET (Q3618269) (← links)
- A multicell matrix solution to the Boltzmann equation applied to the anisotropic electron transport in silicon (Q4452517) (← links)
