Pages that link to "Item:Q1010025"
From MaRDI portal
The following pages link to Three-dimensional quantum simulation of multigate nanowire field effect transistors (Q1010025):
Displaying 9 items.
- A two-dimensional domain decomposition technique for the simulation of quantum-scale devices (Q422951) (← links)
- Time-dependent simulations of quantum waveguides using a time-splitting spectral method (Q622227) (← links)
- Numerical strategies towards peta-scale simulations of nanoelectronics devices (Q991086) (← links)
- 3D quantum transport solver based on the perfectly matched layer and spectral element methods for the simulation of semiconductor nanodevices (Q2462465) (← links)
- Simulation of quantum transport in double-gate MOSFETs using the non-equilibrium Green's function formalism in real-space: A comparison of four methods (Q3015382) (← links)
- A three-dimensional Monte Carlo model for the simulation of nanoelectronic devices (Q3565067) (← links)
- Multiscale Analysis and Computation for a Stationary Schrödinger--Poisson System in Heterogeneous Nanostructures (Q5251785) (← links)
- A new approach for numerical simulation of quantum transport in double‐gate SOI (Q5433590) (← links)
- Computational Science – ICCS 2005 (Q5709618) (← links)