Pages that link to "Item:Q1316044"

The following pages link to Upwind finite difference solution of Boltzmann equation applied to electron transport in semiconductor devices (Q1316044):

Displaying 29 items.

• Finite difference numerical method for the superlattice Boltzmann transport equation and case comparison of CPU(C) and GPU(CUDA) implementations (Q349643) (← links)
• A brief survey of the discontinuous Galerkin method for the Boltzmann-Poisson equations (Q435141) (← links)
• A new numerical method for the solution of the Boltzmann equation in the semiconductor nonlinear electron transport problem (Q549487) (← links)
• A discontinuous Galerkin solver for Boltzmann-Poisson systems in nano-devices (Q658301) (← links)
• Simulation of shock wave diffraction over \(90^\circ \) sharp corner in gases of arbitrary statistics (Q658516) (← links)
• A fast implicit solver for semiconductor models in one space dimension (Q782015) (← links)
• A Galerkin method for the simulation of the transient 2-D/2-D and 3-D/3-D linear Boltzmann equation (Q877849) (← links)
• Galerkin methods for Boltzmann-Poisson transport with reflection conditions on rough boundaries (Q1656626) (← links)
• A WENO-solver for the transients of Boltzmann-Poisson system for semiconductor devices: Performance and comparisons with Monte Carlo methods. (Q1873343) (← links)
• Discontinuous Galerkin deterministic solvers for a Boltzmann-Poisson model of hot electron transport by averaged empirical pseudopotential band structures (Q2309885) (← links)
• Filtered hyperbolic moment method for the Vlasov equation (Q2311994) (← links)
• High-order upwind and non-oscillatory approach for steady state diffusion, advection-diffusion and application to magnetized electrons (Q2312167) (← links)
• Multigroup equations to the hot-electron hot-phonon system in III--V compound semiconductors (Q2488973) (← links)
• A kinetic transport and reaction model and simulator for rarefied gas flow in the transition regime (Q2489703) (← links)
• 2D semiconductor device simulations by WENO-Boltzmann schemes: efficiency, boundary conditions and comparison to Monte Carlo methods (Q2490272) (← links)
• On the Cauchy problem for spatially homogeneous semiconductor Boltzmann equations: existence and uniqueness (Q2504744) (← links)
• A direct multigroup-WENO solver for the 2D non-stationary Boltzmann--Poisson system for GaAs devices: GaAs-MESFET (Q2581696) (← links)
• A domain decomposition method for silicon devices (Q2721311) (← links)
• Positivity-preserving discontinuous Galerkin schemes for linear Vlasov-Boltzmann transport equations (Q3117205) (← links)
• Charge transport in 1D silicon devices via Monte Carlo simulation and Boltzmann‐Poisson solver (Q3156132) (← links)
• Numerical schemes for solving the non-stationary Boltzmann-Poisson system for two-dimensional semiconductor devices (Q3375312) (← links)
• Study of Discrete Scattering Operators for Some Linear Kinetic Models (Q4606908) (← links)
• Simulation of shock wave diffraction by a square cylinder in gases of arbitrary statistics using a semiclassical Boltzmann–Bhatnagar–Gross–Krook equation solver (Q5345923) (← links)
• Semicontinuous Kinetic Theory of the Relaxation of Electrons in GaAs (Q5462782) (← links)
• A Multigroup Approach to the Coupled Electron‐Phonon Boltzmann Equations in InP (Q5462785) (← links)
• A combined multicell‐WENO solver for the Boltzmann‐Poisson system of 1D semiconductor devices (Q5707802) (← links)
• Adaptive energy discretization of the semiconductor Boltzmann equation (Q5758142) (← links)
• A level-set method for computing solutions to viscoelastic two-phase flow. (Q5957380) (← links)
• A finite difference scheme solving the Boltzmann-Poisson system for semiconductor devices (Q5957383) (← links)