Pages that link to "Item:Q1691899"
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The following pages link to Computational and analytical comparison of flux discretizations for the semiconductor device equations beyond Boltzmann statistics (Q1691899):
Displaying 11 items.
- Nonlinear diffusion, boundary layers and nonsmoothness: analysis of challenges in drift-diffusion semiconductor simulations (Q2004436) (← links)
- Generalized Scharfetter-Gummel schemes for electro-thermal transport in degenerate semiconductors using the Kelvin formula for the Seebeck coefficient (Q2222822) (← links)
- Modeling and simulation of the lateral photovoltage scanning method (Q2239117) (← links)
- The 3D transient semiconductor equations with gradient-dependent and interfacial recombination (Q4973265) (← links)
- Consistency and convergence for a family of finite volume discretizations of the Fokker–Planck operator (Q5034839) (← links)
- Unipolar Drift-Diffusion Simulation of S-Shaped Current-Voltage Relations for Organic Semiconductor Devices (Q5117488) (← links)
- Mathematical analysis of a thermodynamically consistent reduced model for iron corrosion (Q6046150) (← links)
- A structure preserving hybrid finite volume scheme for semiconductor models with magnetic field on general meshes (Q6050039) (← links)
- Highly accurate quadrature-based scharfetter-gummel schemes for charge transport in degenerate semiconductors (Q6101933) (← links)
- A weighted hybridizable discontinuous Galerkin method for drift-diffusion problems (Q6120013) (← links)
- Forward lateral photovoltage scanning problem: perturbation approach and existence-uniqueness analysis (Q6616012) (← links)
