Pages that link to "Item:Q1765427"
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The following pages link to A parallel adaptive finite volume method for nanoscale double-gate MOSFETs simulation (Q1765427):
Displaying 16 items.
- Polynomial pattern finding in scattered data (Q507857) (← links)
- Quantum hydrodynamic simulation of discrete-dopant fluctuated physical quantities in nanoscale FinFET (Q546895) (← links)
- A two-dimensional thin-film transistor simulation using adaptive computing technique (Q870120) (← links)
- Numerical strategies towards peta-scale simulations of nanoelectronics devices (Q991086) (← links)
- An accelerated algorithm for 2D simulations of the quantum ballistic transport in nanoscale MOSFETs (Q996489) (← links)
- Three-dimensional quantum simulation of multigate nanowire field effect transistors (Q1010025) (← links)
- Electronic design automation using a unified optimization framework (Q1010038) (← links)
- Scalable massively parallel algorithms for computational nanoelectronics (Q1392063) (← links)
- A quantum corrected energy-transport model for nanoscale semiconductor devices (Q1777049) (← links)
- A spline quasi-interpolation based method to obtain the reset voltage in resistive RAMs in the charge-flux domain (Q2423553) (← links)
- Efficient Simulations of the Transport Properties of Spin Field-Effect Transistors Built on Silicon Fins (Q2896453) (← links)
- FETMOSS: a software tool for 2D simulation of double-gate MOSFET (Q3423186) (← links)
- An Adaptive Mixed Scheme for Energy-Transport Simulations of Field-Effect Transistors (Q4652288) (← links)
- Parallelization of a quantum-classic hybrid model for Nanoscale Semiconductor devices (Q5177325) (← links)
- A Finite Volume Method for the Multi Subband Boltzmann Equation with Realistic 2D Scattering in Double Gate MOSFETs (Q5345902) (← links)
- A new parallel adaptive finite volume method for the numerical simulation of semiconductor devices (Q5956354) (← links)
