Pages that link to "Item:Q2571591"
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The following pages link to Effect of electric fields on the transmission of a double heterostructure based on GaN with a quantum well (Q2571591):
Displaying 8 items.
- Comparing the relativistic and non-relativistic transmission coefficients of the electron transport through a quantum heterostructure (Q397784) (← links)
- A study of the operating parameters and barrier thickness of \(\text{Al}_{0.08}\text{In}_{0.08}\text{Ga}_{0.84}\text{N}/\text{Al}_{x}\text{In}_{y}\text{Ga}_{1-x-y}\text{N}\) double quantum well laser diodes (Q546506) (← links)
- Barrier effects on the optoelectronic properties of GaN-based irregular multiple quantum wells for dichromatic white LEDs (Q546523) (← links)
- Internal field relaxation and its effect on the energy spectrum and transport characteristics of a quantum well (Q694092) (← links)
- Investigating the charge relaxation in semiconductor heterostructures with quantum wells by means of admittance spectroscopy (Q694101) (← links)
- Analysis of boundary conditions for the envelope functions of \(\mathrm{GaN}/\mathrm{InGaN}(0001)\) heterostructures (Q1943789) (← links)
- Indispensable factors influence the quasi-bound levels of biased multi-barrier quantum well structures (Q2478999) (← links)
- The Onset and End of the Gunn Effect in Extrinsic Semiconductors (Q4862969) (← links)
