Pages that link to "Item:Q2864895"
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The following pages link to Numerical solution of drift diffusion equations using 2D finite difference method: application to a strained MOSFET device (Q2864895):
Displaying 4 items.
- Finite difference discretization of semiconductor drift-diffusion equations for nanowire solar cells (Q744357) (← links)
- A two-dimensional thin-film transistor simulation using adaptive computing technique (Q870120) (← links)
- A direct approach to solving the drift-diffusion model equations for use in certain MOSFET devices (Q1903393) (← links)
- Simulation of MESFET device by streamline‐diffusion finite element methods (Q4331566) (← links)