Pages that link to "Item:Q4287670"

The following pages link to ON THE UNIQUENESS OF SOLUTIONS TO THE DRIFT-DIFFUSION MODEL OF SEMICONDUCTOR DEVICES (Q4287670):

Displaying 33 items.

• Finite time blow up for a solution to system of the drift-diffusion equations in higher dimensions (Q329978) (← links)
• Numerical methods for the simulation of a corrosion model with moving oxide layer (Q385932) (← links)
• On the existence of solutions for a drift-diffusion system arising in corrosion modeling (Q480029) (← links)
• The drift-diffusion system in two-dimensional critical Hardy space (Q957966) (← links)
• An augmented drift-diffusion model in a semiconductor device (Q1206861) (← links)
• Uniqueness and regularity for the two-dimensional drift-diffusion model for semiconductors coupled with Maxwell's equations (Q1268388) (← links)
• Uniqueness for the three-dimensional time dependent drift diffusion semiconductor equations with \(L^2\) initial data (Q1290948) (← links)
• Uniqueness for the two-dimensional semiconductor equations in case of high carrier densities (Q1321004) (← links)
• Numerical analysis of DAEs from coupled circuit and semiconductor simulation (Q1772814) (← links)
• The existence and uniqueness of the solution of the boundary-value problem for the one-dimensional drift-diffusion model of a semiconductor device (Q1803482) (← links)
• On the semiconductor drift diffusion equations (Q1913883) (← links)
• Local existence result in time for a drift-diffusion system with Robin boundary conditions (Q2279191) (← links)
• Well-posedness for the drift-diffusion system in \(L^p\) arising from the semiconductor device simulation (Q2481908) (← links)
• A physics-based strategy for choosing initial iterate for solving drift-diffusion equations (Q2679364) (← links)
• Boundary layer analysis and quasi-neutral limits in the drift-diffusion equations (Q2781483) (← links)
• Asymptotic behavior of solutions for the one-dimensional drift-diffusion model in the quarter plane (Q2927291) (← links)
• A Wasserstein gradient flow approach to Poisson−Nernst−Planck equations (Q2963500) (← links)
• DIFFUSION AND HOMOGENIZATION APPROXIMATION FOR SEMICONDUCTOR BOLTZMANN–POISSON SYSTEM (Q3520556) (← links)
• Stationary solutions to an energy model for semiconductor devices where the equations are defined on different domains (Q3549369) (← links)
• (Q4309753) (← links)
• Global estimates and asymptotics for electro reaction diffusion systems in heterostructures (Q4354153) (← links)
• Finite volume scheme for multi-dimensional drift-diffusion equations and convergence analysis (Q4423137) (← links)
• Global well posedness for a 2D drift–diffusion–Maxwell system (Q4689877) (← links)
• ON THE EXISTENCE AND UNIQUENESS OF TRANSIENT SOLUTIONS OF A DEGENERATE NONLINEAR DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS (Q4697589) (← links)
• Existence and Uniqueness of Solutions for a Semiconductor Device Model with Current Dependent Generation-recombination Term (Q4715376) (← links)
• (Q4869443) (← links)
• Existence, Decay Time and Light Yield for a Reaction-Diffusion-Drift Equation in the Continuum Physics of Scintillators (Q5153001) (← links)
• FINITE VOLUME APPROXIMATION FOR DEGENERATE DRIFT-DIFFUSION SYSTEM IN SEVERAL SPACE DIMENSIONS (Q5315589) (← links)
• (Q5865529) (← links)
• Mathematical analysis of a thermodynamically consistent reduced model for iron corrosion (Q6046150) (← links)
• Diffusion limit of a Boltzmann-Poisson system: case of general inflow boundary data profile (Q6631541) (← links)
• On the entropy and exponential convergence to equilibrium for the recombination-drift-diffusion system for scintillators (Q6642902) (← links)
• Degenerate drift-diffusion systems for memristors (Q6652061) (← links)