Pages that link to "Item:Q4879155"
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The following pages link to ASYMPTOTICAL AND NUMERICAL ANALYSIS OF DEGENERACY EFFECTS ON THE DRIFT-DIFFUSION EQUATIONS FOR SEMICONDUCTORS (Q4879155):
Displaying 8 items.
- From the Boltzmann equation to generalized kinetic models in applied sciences (Q1376762) (← links)
- Relaxation-time limit in the multi-dimensional bipolar nonisentropic Euler-Poisson systems (Q2017887) (← links)
- Generalized Scharfetter-Gummel schemes for electro-thermal transport in degenerate semiconductors using the Kelvin formula for the Seebeck coefficient (Q2222822) (← links)
- New developments in the numerical approximation of the drift-diffusion semiconductor device equation (Q2704864) (← links)
- MIXED FINITE ELEMENT SIMULATION OF HETEROJUNCTION STRUCTURES INCLUDING A BOUNDARY LAYER MODEL FOR THE QUASI‐FERMI LEVELS (Q4835971) (← links)
- QUALITATIVE BEHAVIOR OF SOLUTIONS OF A DEGENERATE NONLINEAR DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS (Q4847357) (← links)
- (Q4869443) (← links)
- Asymptotic behavior of the drift-diffusion semiconductor equations (Q5894917) (← links)