Pages that link to "Item:Q5345902"
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The following pages link to A Finite Volume Method for the Multi Subband Boltzmann Equation with Realistic 2D Scattering in Double Gate MOSFETs (Q5345902):
Displaying 11 items.
- Simulation of an \(n^+\)-\(n\)-\(n^+\) diode by using globally-hyperbolically-closed high-order moment models (Q461266) (← links)
- A deterministic solver for a hybrid quantum-classical transport model in nanoMOSFETs (Q843519) (← links)
- An accelerated algorithm for 2D simulations of the quantum ballistic transport in nanoscale MOSFETs (Q996489) (← links)
- A parallel adaptive finite volume method for nanoscale double-gate MOSFETs simulation (Q1765427) (← links)
- A new approach to numerical simulation of charge transport in double gate-MOSFET (Q2008027) (← links)
- A parallel deterministic solver for the Schrödinger-Poisson-Boltzmann system in ultra-short DG-MOSFETs: Comparison with Monte-Carlo (Q2397192) (← links)
- Convective scheme solution of the Boltzmann transport equation for nanoscale semiconductor devices (Q2464997) (← links)
- Discrete kernel preserving model for 1D electron-optical phonon scattering (Q2515530) (← links)
- A Deterministic Multicell Solution to the Coupled Boltzmann-Poisson System Simulating the Transients of a 2D-Silicon MESFET (Q3618269) (← links)
- The Consistency and the Monte Carlo Method for Semiconductor Boltzmann Equations with Multivalley (Q5064418) (← links)
- Convergence of a Direct Simulation Monte Carlo Method for the Space Inhomogeneous Semiconductor Boltzmann Equations with Multi-valley (Q6178107) (← links)
