Pages that link to "Item:Q5937908"
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The following pages link to Computation for electromigration in interconnects of microelectronic devices (Q5937908):
Displaying 15 items.
- A fitted finite element method for the numerical approximation of void electro-stress migration (Q268875) (← links)
- The level-set method applied to droplet dynamics in the presence of an electric field (Q416717) (← links)
- Creep flow, diffusion, and electromigration in small scale interconnects (Q1019389) (← links)
- A numerical study of electro-migration voiding by evolving level set functions on a fixed Cartesian grid (Q1306116) (← links)
- Surface evolution in bare bamboo-type metal lines under diffusion and electric field effects (Q1399667) (← links)
- A numerical model of stress driven grain boundary diffusion. (Q1418699) (← links)
- A phase field model for failure in interconnect lines due to coupled diffusion mechanisms. (Q1852810) (← links)
- Monte Carlo simulation of electromigration phenomena in metallic lines (Q1873072) (← links)
- Electromigration of intergranular voids in metal films for microelectronic interconnects. (Q1873405) (← links)
- Three-dimensional finite element analysis of the evolution of voids and thin films by strain and electromigration induced surface diffusion (Q1968692) (← links)
- Irreversible thermodynamics of triple junctions during the intergranular void motion under the electromigration forces (Q2385836) (← links)
- Electromigration failure of metal lines (Q2432249) (← links)
- An unfitted finite element method for the numerical approximation of void electromigration (Q2517475) (← links)
- Models of void electromigration (Q2730753) (← links)
- Numerical simulation of grain-boundary grooving by level set method (Q5943861) (← links)
