Pages that link to "Item:Q5956354"
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The following pages link to A new parallel adaptive finite volume method for the numerical simulation of semiconductor devices (Q5956354):
Displaying 11 items.
- A quantum corrected Poisson-Nernst-Planck model for biological ion channels (Q326630) (← links)
- Efficient deterministic parallel simulation of 2D semiconductor devices based on WENO-Boltzmann schemes (Q658164) (← links)
- Numerical simulation of quantum effects in high-k gate dielectric MOS structures using quantum mechanical models (Q696487) (← links)
- A two-dimensional thin-film transistor simulation using adaptive computing technique (Q870120) (← links)
- The bipolar quantum drift-diffusion model (Q1034287) (← links)
- An iterative method for adaptive finite element solutions of an energy transport model of semiconductor devices (Q1405166) (← links)
- Monotone iterative methods for the adaptive finite element solution of semiconductor equations (Q1414308) (← links)
- A posteriori error control in numerical simulations of semiconductor nanodevices (Q1682685) (← links)
- A parallel adaptive finite volume method for nanoscale double-gate MOSFETs simulation (Q1765427) (← links)
- A quantum corrected energy-transport model for nanoscale semiconductor devices (Q1777049) (← links)
- A novel parallel adaptive Monte Carlo method for nonlinear Poisson equation in semiconductor devices (Q1873047) (← links)