Large-Area, Fast-Gated Digital SiPM With Integrated TDC for Portable and Wearable Time-Domain NIRS

DOI10.5281/zenodo.14795603Zenodo14795603MaRDI QIDQ6708601

Dataset published at Zenodo repository.

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Publication date: 3 February 2025

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Description

We present the design and characterization ofa large-area, fast-gated, all-digital single-photon detector withprogrammable active area, internal gate generator, and time-to-digital converter (TDC) with a built-in histogram builder circuit, suitable for performing high-sensitivity time-domain nearinfrared spectroscopy (TD-NIRS) measurements when coupled with pulsed laser sources. We used a novel low-power differential sensing technique that optimizes area occupation. The photodetector is a time-gated digital silicon photomultiplier (dSiPM) with an 8.6-mm2 photosensitive area, 37% fill-factor, and 300 ps (20%80%) gate rising edge, based on low-noise single-photon avalanche diodes (SPADs) and fabricated in 0.35-m CMOS technology. The built-in TDC with a histogram builder has a least-significant-bit (LSB) of 78 ps and 128 time-bins, and the integrated circuit can be interfaced directly with a low-cost microcontroller with a serial interface for programming and readout. Experimental characterization demonstrated a temporal response as good as 300-ps full-width at half-maximum (FWHM) and a dynamic range 100 dB (thanks to the programmable active area size). This microelectronic detector paves the way for a miniaturized, stand-alone, multi-wavelength TD-NIRS system with an unprecedented level of integration and responsivity, suitable for portable and wearable systems. DOI:10.1109/JSSC.2020.3006442

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