A Green-function theory of plasmons in two-dimensional semiconductor structures: Finite magnetic field (Q1283534)
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scientific article; zbMATH DE number 1275802
| Language | Label | Description | Also known as |
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| English | A Green-function theory of plasmons in two-dimensional semiconductor structures: Finite magnetic field |
scientific article; zbMATH DE number 1275802 |
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A Green-function theory of plasmons in two-dimensional semiconductor structures: Finite magnetic field (English)
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26 November 2000
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The magnetoplasmon excitations in several two-dimensional semiconductor structures placed in magnetic field, are investigated in the framework of a Green-function theory. The magnetic field is assumed to be parallel to the interfaces and perpendicular to the direction of propagation (Voigt geometry). The material layers are characterized by frequency-dependent dielectric function, and the quantum-size effects are ignored. The authors derive explicit expressions for the response functions associated with electromagnetic fields. It is shown that previous well-established results can be reproduced with this theory, and that the excitation spectrum in Voigt geometry contains a magnetic-field-dependent gap within which the magnetoplasmons cannot propagate.
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two-dimensional semiconductor structures
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Voigt geometry
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magnetoplasmon excitations
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Green-function theory
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frequency-dependent dielectric function
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response functions
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0.8565859
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0.85244805
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0.8455056
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0.8383719
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0.83826786
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0.8378324
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0.8375945
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