Analytical study on the influence of parasitic elements in a memristor (Q1720618)
From MaRDI portal
| This is the item page for this Wikibase entity, intended for internal use and editing purposes. Please use this page instead for the normal view: Analytical study on the influence of parasitic elements in a memristor |
scientific article; zbMATH DE number 7018677
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Analytical study on the influence of parasitic elements in a memristor |
scientific article; zbMATH DE number 7018677 |
Statements
Analytical study on the influence of parasitic elements in a memristor (English)
0 references
8 February 2019
0 references
Summary: We study a memristive circuit with included parasitic elements, such as capacitance and inductance. In the multiple-scale scheme, we analytically show how the parasitic elements affect the voltage and the current. Finally, we provide an analytical expression for the intersection point coordinates, through which we discuss the functional behavior of the pinched hysteresis loop versus the operating frequency and the parasitic elements.
0 references
0.91460454
0 references
0.8969895
0 references
0.87215984
0 references
0 references
0 references
0.84046286
0 references
0.83326966
0 references
0.83235776
0 references
0 references