Implicit-explicit multistep finite element methods for the semiconductor device problem. (Q1873642)
From MaRDI portal
| This is the item page for this Wikibase entity, intended for internal use and editing purposes. Please use this page instead for the normal view: Implicit-explicit multistep finite element methods for the semiconductor device problem. |
scientific article; zbMATH DE number 1917034
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Implicit-explicit multistep finite element methods for the semiconductor device problem. |
scientific article; zbMATH DE number 1917034 |
Statements
Implicit-explicit multistep finite element methods for the semiconductor device problem. (English)
0 references
2003
0 references
Optimal \(L^2\)-norm error estimates are derived for a numerical method to compute the transient behaviour of a semiconductor device. The Poisson equation for the electric potential is discretized by a finite element method (FEM), and electron and hole density equations are treated by implicit-explicit multistep FEMs.
0 references
semiconductor device
0 references
strong stability
0 references
multistep methods
0 references
finite element methods
0 references
error estimates
0 references
Poisson equation
0 references
implicit-explicit multistep methods
0 references