Analysis of a finite element method for the drift-diffusion semiconductor device equations: The multidimensional case (Q1899122)
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scientific article; zbMATH DE number 802465
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| English | Analysis of a finite element method for the drift-diffusion semiconductor device equations: The multidimensional case |
scientific article; zbMATH DE number 802465 |
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Analysis of a finite element method for the drift-diffusion semiconductor device equations: The multidimensional case (English)
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4 February 1996
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The authors consider the two-dimensional drift semiconductor problem. They put forward a finite element solution and discuss the relevant stability and convergence conditions. An advantage of the method is that the approximate electric field appears in the form needed for the discontinuous finite element procedure. Numerical results are presented in graphical form for the case of an MOS-transistor and it appears that these are satisfactory.
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drift diffusion
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numerical results
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MOS-transistor
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semiconductor
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finite element
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stability
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convergence
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