Monte Carlo simulation of microwave devices (Q1921112)

Particle Monte Carlo methods for the solution of semiclassical electron transport in semiconductors, described by the Boltzmann transport equation, are studied. The presented techniques provide a stochastic solution of the Boltzmann equation. It is known that the main disadvantages of the approach are the computational cost and the presence of statistical noise. The studied techniques allow the inclusion of detailed bandstructure models for the semiconductor. The authors write that the use of full Monte Carlo simulations is necessary when the goal is to understand the physical details of the transport, especially when hot electron effects are dominant. It is shown that heterojunctions are easily included and some quantum effects can also be incorporated. The presented Monte Carlo device simulations are focused on aspects which are relevant for microwave applications. Some examples of simulations are considered. They cover transient and steady-state simulations of important microwave devices. Issues relevant for the coupling of Monte Carlo simulation to field equations are discussed.