Mathematical approach and optimisation of nanometric base thickness for a SiGeC HBT dedicated to radiofrequency applications (Q2349691)
From MaRDI portal
scientific article
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Mathematical approach and optimisation of nanometric base thickness for a SiGeC HBT dedicated to radiofrequency applications |
scientific article |
Statements
Mathematical approach and optimisation of nanometric base thickness for a SiGeC HBT dedicated to radiofrequency applications (English)
0 references
17 June 2015
0 references
This paper deals with the mathematical analysis of a a heterojunction bipolar transistor base made from a SiGeC alloy. This analysis mainly focuses on the influence of thickness based on the static and dynamic characteristics of the bipolar transistor. The study is developed by combining a revised Scharfetter-Gummel-type approach with the Gauss-Seidel method and matrix algebra.
0 references
numerical modelling
0 references
drift-diffusion (DDM) model
0 references
SiGe(C)
0 references
heterojunction bipolar transistor (HBT)
0 references
nanometric
0 references
thickness base
0 references
