A hybrid classical-quantum transport model for the simulation of carbon nanotube transistors (Q2878965)

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scientific article; zbMATH DE number 6340653
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A hybrid classical-quantum transport model for the simulation of carbon nanotube transistors
scientific article; zbMATH DE number 6340653

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    5 September 2014
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    nanostructures
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    nanoparticles
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    transport processes
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    applications to physics
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    motion of charged particles
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    semiconductors
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    A hybrid classical-quantum transport model for the simulation of carbon nanotube transistors (English)
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    A geometrical hybrid strategy of using the quantum model in regions where quantum effects are strong and couple it to a model governed by classical mechanics in the rest of the device domain is proposed. The strategy to couple the drift-diffusion Schrödinger system is quite different since the coupling is direct and the authors get an analytic expression of the connection conditions by writing the exact continuity of the current at the interface. The method is extended to the framework of strongly confined nanostructure (nanowires or nanotubes) for which both the quantum transport and the classical collisional transport need new formulations. A one- dimensional effective mass Schrödinger system is coupled with a drift-diffusion model, both taking into account the peculiarities due to the strong confinement and to the two-dimensional transversal crystal structures. Interface conditions are built preserving the continuity of the total current.
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