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Lessons from nanoelectronics. A new perspective on transport - MaRDI portal

Lessons from nanoelectronics. A new perspective on transport (Q2892697)

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scientific article; zbMATH DE number 6048977
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English
Lessons from nanoelectronics. A new perspective on transport
scientific article; zbMATH DE number 6048977

    Statements

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    22 June 2012
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    Ohm's law
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    ballistic transport
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    transistor
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    semiconductors
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    conductivity
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    resistance
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    free-path length
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    bottom-up approach
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    nanometer scale
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    Lessons from nanoelectronics. A new perspective on transport (English)
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    The book is based on a lecture course which is focused on a relatively elementary explanation of the conductivity mechanism in semiconductors (with the application to transistors). Usually, in physics textbooks, the classical mechanism of the diffusive conductivity is introduced at first, which gives rise to the classical Ohm's law, and then mechanisms of the ballistic conductivity are introduced, which are relevant for much smaller, nanometer, scales (such as those occurring in modern transistors, with each one built of several hundreds of atoms only). This book offers an opposite way of the presentation, which the author calls a ``bottom-up'' one, i.e., first introducing the conductivity mechanism at the nanoscale, and then gradually proceeding to much larger scales, ending up with the classical resistance scenario and classical Ohm's law.
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