Finite element analysis of semiconductor device equations with heat effect (Q2905681)

The authors consider the bipolar energy balance model for semiconductors which consists of the balance equations for electron and hole densities and the balance equations for the crystal temperature, coupled with the Poisson equation for the electrostatic potential.NEWLINENEWLINESuch a system of PDEs is discretized by a Galerkin method by using mixed finite elements for the electrostatic potential and finite elements for the densities and crystal temperature in the lowest-order Raviart-Thomas space. The existence and uniqueness of the discretized equations is proved using Schauder's fixed point theorem. An analysis of the convergence of the approximate solution to the exact one is given as well.