Effects of Unintended Dopants on I-V Characteristics of the Double-Gate MOSFETs, a Simulation Study (Q4922244)
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scientific article; zbMATH DE number 6168081
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Effects of Unintended Dopants on I-V Characteristics of the Double-Gate MOSFETs, a Simulation Study |
scientific article; zbMATH DE number 6168081 |
Statements
Effects of Unintended Dopants on I-V Characteristics of the Double-Gate MOSFETs, a Simulation Study (English)
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29 May 2013
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current-voltage characteristics
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double gate
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MOSFET
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unintended dopant
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