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The well-posedness of bipolar semiconductor hydrodynamic model with recombination-generation rate on the bounded interval - MaRDI portal

The well-posedness of bipolar semiconductor hydrodynamic model with recombination-generation rate on the bounded interval (Q5109250)

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scientific article; zbMATH DE number 7198424
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The well-posedness of bipolar semiconductor hydrodynamic model with recombination-generation rate on the bounded interval
scientific article; zbMATH DE number 7198424

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    The well-posedness of bipolar semiconductor hydrodynamic model with recombination-generation rate on the bounded interval (English)
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    11 May 2020
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    recombination-generation rate
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    global-in-time solution
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    subsonic
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    energy estimates
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