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Design and analysis of a new structure of InAs/GaAs QDIP for 8–12 μm infrared windows with low dark current - MaRDI portal

Design and analysis of a new structure of InAs/GaAs QDIP for 8–12 μm infrared windows with low dark current (Q5306522)

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scientific article; zbMATH DE number 5691592
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English
Design and analysis of a new structure of InAs/GaAs QDIP for 8–12 μm infrared windows with low dark current
scientific article; zbMATH DE number 5691592

    Statements

    Design and analysis of a new structure of InAs/GaAs QDIP for 8–12 μm infrared windows with low dark current (English)
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    9 April 2010
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    QDIP
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    homogeneous and inhomogeneous broadening
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    resonant tunnelling
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    pyramidal shape
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    detectivity
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    Identifiers