A dynamic model of power metal-oxide-semiconductor field-effect transistor half-bridges for the fast simulation of switching induced electromagnetic emissions (Q5861130)
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scientific article; zbMATH DE number 7484623
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | A dynamic model of power metal-oxide-semiconductor field-effect transistor half-bridges for the fast simulation of switching induced electromagnetic emissions |
scientific article; zbMATH DE number 7484623 |
Statements
A dynamic model of power metal-oxide-semiconductor field-effect transistor half-bridges for the fast simulation of switching induced electromagnetic emissions (English)
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4 March 2022
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conducted electromagnetic emission (EME)
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electromagnetic compatibility (EMC)
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power inverter
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metal-oxide-semiconductor field-effect transistor (MOSFET)
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physics based modeling
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