Least-squares finite element formulation for hydrodynamic modeling of semiconductor devices. (Q5930708)

A least-squares FEM (LSFEM) for deep-submicron semiconductor devices has been developed by the authors. This method contains neither adjustable parameter nor smooth operator to arrive at a stable solution. The formulation results in a symmetric and positive definite algebraic system. The described method is examined on 1D and 2D deep-submicron semiconductor device. This method demonstrates its capability of handling the large gradients of variables and highly nonlinear source terms in the semiconductor hydrodynamics equations.