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A temperature-related boundary Cauchy-Born method for multi-scale modeling of silicon nano-structures - MaRDI portal

A temperature-related boundary Cauchy-Born method for multi-scale modeling of silicon nano-structures (Q5964455)

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scientific article; zbMATH DE number 6547199
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A temperature-related boundary Cauchy-Born method for multi-scale modeling of silicon nano-structures
scientific article; zbMATH DE number 6547199

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    A temperature-related boundary Cauchy-Born method for multi-scale modeling of silicon nano-structures (English)
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    29 February 2016
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    multi-scale
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    molecular dynamics
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    Tersoff potential
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    Cauchy-Born
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    silicon
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