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Contrast structures in the reaction-advection-diffusion problem appearing in a drift-diffusion model of a semiconductor in the case of nonsmooth reaction - MaRDI portal

Contrast structures in the reaction-advection-diffusion problem appearing in a drift-diffusion model of a semiconductor in the case of nonsmooth reaction (Q6167599)

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scientific article; zbMATH DE number 7723435
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Contrast structures in the reaction-advection-diffusion problem appearing in a drift-diffusion model of a semiconductor in the case of nonsmooth reaction
scientific article; zbMATH DE number 7723435

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    Contrast structures in the reaction-advection-diffusion problem appearing in a drift-diffusion model of a semiconductor in the case of nonsmooth reaction (English)
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    7 August 2023
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    singularly perturbed elliptic problem
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    reaction-advection-diffusion equation
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    internal transition layers
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    method of differential inequalities
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    nonsmooth source
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    electron-depletion layer
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    GaAs
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    N-shaped current-voltage characteristics
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